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Toshiba TPH8R80ANH,L1Q
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TPH8R80ANH,L1Q
Manufacturers: Toshiba
Qty: 2587
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Description: MOSFET N-Ch 120V 59A 61W UMOSVIII 2180pF 33nC
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:100 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:59 A
Rds On - Drain-Source Resistance:7.4 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:2 V to 4 V
Qg - Gate Charge:33 nC
Maximum Operating Temperature:
Pd - Power Dissipation:61 W
Mounting Style:SMD/SMT
Package / Case:SOP-8
Packaging:Reel
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