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Infineon Technologies IPD25CN10N G
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IPD25CN10N G
Manufacturers: Infineon Technologies
Qty: 4958
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Description: MOSFET N-CH 100V 35A TO252-3
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Product Information:
Packaging:Cut Tape (CT) Alternate Packaging
Series:HEXFETR
FET Type:MOSFET N-Channel, Metal Oxide
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 106A (Tc)
Rds On (Max) @ Id, Vgs:5 mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:2.25V @ 250μA
Gate Charge (Qg) @ Vgs:44nC @ 4.5V
Input Capacitance (Ciss) @ Vds:3765pF @ 20V
Power - Max:2.8W
Mounting Type:Surface Mount
Package / Case:DirectFET? Isometric MX
Supplier Device Package:DIRECTFET? MX
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