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Infineon Technologies (SPU01N60C3)
PartNo:
SPU01N60C3
Manufacturers:
Infineon Technologies
Qty:
1113
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Description:
MOSFET N-CH 650V 0.8A TO-251
PDF:
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Product Information:
Packaging:
Cut Tape (CT) Alternate Packaging
Series:
TrenchFETR
FET Type:
MOSFET P-Channel, Metal Oxide
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
11A (Ta)
Rds On (Max) @ Id, Vgs:
9.2 mOhm @ 18.6A, 10V
Vgs(th) (Max) @ Id:
3V @ 250μA
Gate Charge (Qg) @ Vgs:
140nC @ 10V
Input Capacitance (Ciss) @ Vds:
-
Power - Max:
1.9W
Mounting Type:
Surface Mount
Package / Case:
PowerPAKR SO-8
Supplier Device Package:
PowerPAKR SO-8
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