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Infineon Technologies (BUZ32 H)
PartNo:
BUZ32 H
Manufacturers:
Infineon Technologies
Qty:
370
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Description:
MOSFET N-CH 200V 9.5A TO220-3
PDF:
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Product Information:
Packaging:
Cut Tape (CT) Alternate Packaging
Series:
FDmesh? II
FET Type:
MOSFET N-Channel, Metal Oxide
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
21A (Tc)
Rds On (Max) @ Id, Vgs:
160 mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 250μA
Gate Charge (Qg) @ Vgs:
80nC @ 10V
Input Capacitance (Ciss) @ Vds:
2400pF @ 50V
Power - Max:
160W
Mounting Type:
Surface Mount
Package / Case:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:
D2PAK
1N5822
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