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Infineon Technologies (IPW90R1K2C3)
PartNo:
IPW90R1K2C3
Manufacturers:
Infineon Technologies
Qty:
215
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Description:
MOSFET N-CH 900V 5.1A TO-247
PDF:
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Product Information:
Packaging:
Cut Tape (CT)
Series:
HEXFETR
FET Type:
MOSFET N-Channel, Metal Oxide
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
16A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs:
5.7 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 250μA
Gate Charge (Qg) @ Vgs:
17nC @ 4.5V
Input Capacitance (Ciss) @ Vds:
1360pF @ 10V
Power - Max:
1.4W
Mounting Type:
Surface Mount
Package / Case:
DirectFET? Isometric ST
Supplier Device Package:
DIRECTFET? ST
1N5822
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