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Fairchild Semiconductor HGTD1N120BNS9A
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HGTD1N120BNS9A
Manufacturers: Fairchild Semiconductor
Qty: 4345
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Description: IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
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Product Information:
RoHS:Details
Configuration:Single
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.5 V
Maximum Gate Emitter Voltage:+/- 20 V
Continuous Collector Current at 25 C:5.3 A
Gate-Emitter Leakage Current:+/- 250 nA
Power Dissipation:60 W
Maximum Operating Temperature:+ 150 C
Package / Case:TO-252AA-3
Packaging:Reel
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