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Infineon Technologies IHW15N120R3
PartNo:

IHW15N120R3
Manufacturers: Infineon Technologies
Qty: 200
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Description: IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
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Product Information:
RoHS:Details
Configuration:
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:1.7 V
Maximum Gate Emitter Voltage:20 V
Continuous Collector Current at 25 C:30 A
Gate-Emitter Leakage Current:100 nA
Power Dissipation:254 W
Maximum Operating Temperature:
Package / Case:PG-TO-247-3
Packaging:Tube
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