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IXYS IXYH50N120C3D1
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IXYH50N120C3D1
Manufacturers: IXYS
Qty: 105
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Description: IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT
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Product Information:
RoHS:Details
Configuration:Single
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:4.2 V
Maximum Gate Emitter Voltage:30 V
Continuous Collector Current at 25 C:90 A
Gate-Emitter Leakage Current:100 nA
Power Dissipation:625 W
Maximum Operating Temperature:+ 150 C
Package / Case:TO-247-3
Packaging:Tube
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