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Vishay / Siliconix SI3590DV-T1-GE3
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SI3590DV-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 5320
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Description: MOSFET 30V 3.0/2.0A 1.15W 77/170mohm @ 4.5V
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Product Information:
RoHS:Details
Transistor Polarity:N and P-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:12 V
Id - Continuous Drain Current:2.5 A
Rds On - Drain-Source Resistance:62 mOhms, 135 mOhms
Configuration:Dual
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:830 mW
Mounting Style:SMD/SMT
Package / Case:TSOP-6
Packaging:Reel
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