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Vishay / Siliconix SiZ730DT-T1-GE3
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SiZ730DT-T1-GE3
Manufacturers: Vishay / Siliconix
Qty: 4710
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Description: MOSFET 30V 16/35A 27/48W 9.3/3.9mohm @ 10V
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:12.9 A
Rds On - Drain-Source Resistance:7.5 mOhms, 3.2 mOhms
Configuration:Dual
Vgs th - Gate-Source Threshold Voltage:2.2 V
Qg - Gate Charge:15.6 nC, 43 nC
Maximum Operating Temperature:
Pd - Power Dissipation:3.9 W, 4.6 W
Mounting Style:SMD/SMT
Package / Case:PowerPAIR-6 6x3.7
Packaging:Reel
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