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All Product >
Discrete Semiconductors
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IGBT
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Supertex (TC6320K6-G)
PartNo:
TC6320K6-G
Manufacturers:
Supertex
Qty:
2906
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Description:
MOSFET N AND P-CH 200V MOSFET
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N and P-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:
5.2 A
Rds On - Drain-Source Resistance:
7 Ohms, 8 Ohms
Configuration:
Dual Dual Drain
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
Mounting Style:
SMD/SMT
Package / Case:
DFN-8
Packaging:
Reel
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
TC6320K6-G Related Product
TC6320TG
TC6381AF
TC6367AN
TC6369AN
TC6326AF
TC6367HS
TC6384AFG-0001
TC6387XB
TC6398AF
TC6320K6-G
TC6320K6-G
TC6320TG-G
TC6384AF-0001
TC6389AN
TC6381AF
TC6398AF
TC6390AN
TC6369AN
TC6367AN
TC6358TB
TC6371AF
TC6384AFG-0001
TC6398XB
TC6387XB
TC6320K6-G
TC6320TG-G
TC6320K6-G
TC6320TG-G
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