Home
Tel: 86-755-83295289
Email:
mail@cxda.com
English
简体中文
한국어
About Us
All Product
Manufacturers
RFQ
Quality Control
News
Contact Us
PartNo
Keyword
Product Detail
All Product >
Discrete Semiconductors
>
IGBT
>
Infineon Technologies (SPP80P06P H)
PartNo:
SPP80P06P H
Manufacturers:
Infineon Technologies
Qty:
2283
Request Qty:
Description:
MOSFET SIPMOS Power Transistor
PDF:
Quick Quotation
Company Name:
*
Contact Name:
*
Email:
*
Tel:
*
Request Qty:
*
*
Verification Code:
*
Product Information:
RoHS:
Details
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
- 60 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
- 80 A
Rds On - Drain-Source Resistance:
23 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
340 W
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Packaging:
Tube
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
SPP80P06P H Related Product
SPP80N03S2-04
SPP80N03S2L-05
SPP80N03S2L-04
SPP80N03S2L-04 2N03L04
SPP80N03S2L-05 2N03L05
SPP80N06S-08 1N0608
SPP80N06S2L-05 2N06L05
SPP80P06P 80P06P
SPP80N06S2L-07
SPP80N08S2-07
SPP80N08S2-07
SPP80N03S2L-03
SPP80N03S2L-03
SPP80N04S2-04
SPP80N08S2-07
SPP80N03S2-03
SPP80P06P H
SPP80P06P H
SPP80N03S2L-04
SPP80N06S-08
SPP80N03S2L-05
SPP80N03S2L-04
SPP80N06S-08
SPP80N03S2L-05
SPP80P06P H
Electronic Components Distributor
Since 2000
©2001 - 2015 www.cxda.com all rights reservied.
FAQ
Product Index
Contact Us
Quality Control
RFQ
Manufacturers
About Us
Electronic Components Supplier |
China Electronic Components Manufacturer |
Electronic Components Distributor
粤ICP备15038990号