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Discrete Semiconductors
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IGBT
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Infineon Technologies (SPD30P06P G)
PartNo:
SPD30P06P G
Manufacturers:
Infineon Technologies
Qty:
2010
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Description:
MOSFET SIPMOS Power Transistor
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
- 60 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:
- 30 A
Rds On - Drain-Source Resistance:
75 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
Pd - Power Dissipation:
Mounting Style:
Package / Case:
TO-252-3
Packaging:
Reel
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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SPD30P06P G
SPD30P06P G
SPD30P06P G
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