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Infineon Technologies (BFS 483 H6327)
PartNo:
BFS 483 H6327
Manufacturers:
Infineon Technologies
Qty:
10177
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Description:
Transistors RF Bipolar RF BIP TRANSISTOR
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Product Information:
RoHS:
Details
Transistor Type:
Bipolar
Technology:
Si
Transistor Polarity:
NPN
Frequency:
8 GHz
DC Collector/Base Gain hfe Min:
70
Collector- Emitter Voltage VCEO Max:
12 V
Emitter- Base Voltage VEBO:
2 V
Continuous Collector Current:
65 mA
Maximum Operating Temperature:
+ 150 C
Configuration:
Power Dissipation:
450 mW
Mounting Style:
SMD/SMT
Package / Case:
SOT-363
Packaging:
Reel
BAP64-04,215
PIN Diodes PIN 175V 100MA
MA4FCP200
PIN Diodes .1-40GHZz Cj=.02pF TL 100ns
MA4L011-134
PIN Diodes
MA4P606-131
PIN Diodes Vr=1000VDC Rs=.7 Ohm Cj=.6pF
MA4SPS502
PIN Diodes Vr=-275V Rs=3.2 Ohm Ct=.2pF Max.
BFS 483 H6327 Related Product
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