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Discrete Semiconductors
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GeneSiC Semiconductor (1N1206A)
PartNo:
1N1206A
Manufacturers:
GeneSiC Semiconductor
Qty:
177
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Description:
DIODE GEN PURPOSE 600V 12A DO4
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Product Information:
Minimum Quantity :
1,500
Packaging:
Tape & Reel (TR) Alternate Packaging
Series:
eSMP?
Diode Type:
Avalanche
Voltage - DC Reverse (Vr) (Max):
1000V (1kV)
Current - Average Rectified (Io):
1.3A (DC)
Voltage - Forward (Vf) (Max) @ If:
2.5V @ 2A
Speed:
Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr):
75ns
Current - Reverse Leakage @ Vr:
10μA @ 1000V
Capacitance @ Vr, F:
29pF @ 4V, 1MHz
Mounting Type:
Surface Mount
Package / Case:
TO-277, 3-PowerDFN
Supplier Device Package:
TO-277A
Operating Temperature - Junction:
-55°C ~ 175°C
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