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Infineon Technologies (FZ600R12KE3)
PartNo:
FZ600R12KE3
Manufacturers:
Infineon Technologies
Qty:
95
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Description:
IGBT Modules 1200V 600A SINGLE
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Details
Product:
IGBT Silicon Modules
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
1.7 V
Continuous Collector Current at 25 C:
900 A
Gate-Emitter Leakage Current:
400 nA
Power Dissipation:
2800 W
Maximum Operating Temperature:
+ 125 C
Package / Case:
62 mm
Packaging:
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SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
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MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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