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Discrete Semiconductors
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NXP Semiconductors (PHD9NQ20T,118)
PartNo:
PHD9NQ20T,118
Manufacturers:
NXP Semiconductors
Qty:
1416
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Description:
MOSFET TAPE13 PWR-MOS
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Vgs - Gate-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
44 A
Rds On - Drain-Source Resistance:
300 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
88 W
Mounting Style:
SMD/SMT
Package / Case:
DPAK-2
Packaging:
Reel
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MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms
STP15N65M5
MOSFET N-Ch 650V .0308 Ohm 11A MDmesh V MOS
SI1913DH-T1-E3
MOSFET DUAL P-CH 20V (D-S)
SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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PHD9NQ20T,118
PHD9NQ20T,118
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