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Discrete Semiconductors
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STMicroelectronics (STU7N65M2)
PartNo:
STU7N65M2
Manufacturers:
STMicroelectronics
Qty:
890
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Description:
MOSFET POWER MOSFET
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Vgs - Gate-Source Breakdown Voltage:
25 V
Id - Continuous Drain Current:
5 A
Rds On - Drain-Source Resistance:
1.15 Ohms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
3 V
Qg - Gate Charge:
9 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
60 W
Mounting Style:
Through Hole
Package / Case:
IPAK-3
Packaging:
Tube
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