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Discrete Semiconductors
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STMicroelectronics (STI34N65M5)
PartNo:
STI34N65M5
Manufacturers:
STMicroelectronics
Qty:
785
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Description:
MOSFET N-Ch 650V 0.09Ohm 28A pwr MOSFET
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:
28 A
Rds On - Drain-Source Resistance:
110 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
4 V
Qg - Gate Charge:
62.5 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
190 W
Mounting Style:
Through Hole
Package / Case:
IPAK-3
Packaging:
Tube
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