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Discrete Semiconductors
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Diodes
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ROHM Semiconductor (RW1A030APT2CR)
PartNo:
RW1A030APT2CR
Manufacturers:
ROHM Semiconductor
Qty:
5213
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Description:
MOSFET Trans MOSFET P-CH 12V 3A
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
- 12 V
Vgs - Gate-Source Breakdown Voltage:
8 V
Id - Continuous Drain Current:
3 A
Rds On - Drain-Source Resistance:
30 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
22 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
700 mW
Mounting Style:
SMD/SMT
Package / Case:
WEMT-6
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Reel
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MOSFET 12V 60A 104W 1.2mohm @ 10V
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RW1A030APT2CR
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