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Discrete Semiconductors
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Toshiba (TPN11003NL,LQ)
PartNo:
TPN11003NL,LQ
Manufacturers:
Toshiba
Qty:
3000
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Description:
MOSFET N-Ch DTMOS VII-H 19W 510pF 31A 30V
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
31 A
Rds On - Drain-Source Resistance:
12.6 mOhms
Configuration:
Single Quad Drain
Vgs th - Gate-Source Threshold Voltage:
2.3 V
Qg - Gate Charge:
7.5 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
19 W
Mounting Style:
SMD/SMT
Package / Case:
TSON-8
Packaging:
Reel
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SI1913DH-T1-E3
MOSFET DUAL P-CH 20V (D-S)
SIR494DP-T1-GE3
MOSFET 12V 60A 104W 1.2mohm @ 10V
IRLU120NPBF
MOSFET MOSFT 100V 11A 185mOhm 13.3nC LogLv
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