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Toshiba Semiconductor and Storage TPN4R203NC,L1Q
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TPN4R203NC,L1Q

Manufacturers: Toshiba Semiconductor and Storage
Qty: 14020
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Description: MOSFET N CH 30V 23A 8TSON-ADV
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Product Information:

Packaging:Tape & Reel (TR)
Series:-
FET Type:MOSFET N-Channel, Metal Oxide
FET Feature:Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Rds On (Max) @ Id, Vgs:71 mOhm @ 2A, 4V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) @ Vgs:4.3nC @ 4V
Input Capacitance (Ciss) @ Vds:270pF @ 10V
Power - Max:700mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TSM
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