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Toshiba Semiconductor and Storage (TPH12008NH,L1Q)
PartNo:
TPH12008NH,L1Q
Manufacturers:
Toshiba Semiconductor and Storage
Qty:
3583
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Description:
MOSFET N CH 80V 24A SOP
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Product Information:
Packaging:
Cut Tape (CT) Alternate Packaging
Series:
-
FET Type:
MOSFET N-Channel, Metal Oxide
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Rds On (Max) @ Id, Vgs:
11.7 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) @ Vgs:
7.9nC @ 10V
Input Capacitance (Ciss) @ Vds:
420pF @ 15V
Power - Max:
2W
Mounting Type:
Surface Mount
Package / Case:
8-PowerVDFN
Supplier Device Package:
8-HSMT (3.2x3)
1N5822
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