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Toshiba Semiconductor and Storage (TK7J90E,S1E)
PartNo:
TK7J90E,S1E
Manufacturers:
Toshiba Semiconductor and Storage
Qty:
135
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Description:
MOSFET N-CH 900V TO-3PN
PDF:
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Product Information:
Packaging:
Tube
Series:
HiPerFET?
FET Type:
MOSFET N-Channel, Metal Oxide
FET Feature:
Standard
Drain to Source Voltage (Vdss):
200V
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Rds On (Max) @ Id, Vgs:
60 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:
4V @ 4mA
Gate Charge (Qg) @ Vgs:
220nC @ 10V
Input Capacitance (Ciss) @ Vds:
4400pF @ 25V
Power - Max:
300W
Mounting Type:
Through Hole
Package / Case:
TO-247-3
Supplier Device Package:
TO-247AD (IXFH)
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