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Toshiba Semiconductor and Storage (TK6A80E,S4X)
PartNo:
TK6A80E,S4X
Manufacturers:
Toshiba Semiconductor and Storage
Qty:
124
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Description:
MOSFET N-CH 800V TO220SIS
PDF:
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Product Information:
Packaging:
Cut Tape (CT) Alternate Packaging
Series:
-
FET Type:
MOSFET N-Channel, Metal Oxide
FET Feature:
Standard
Drain to Source Voltage (Vdss):
450V
Current - Continuous Drain (Id) @ 25°C:
140mA (Ta)
Rds On (Max) @ Id, Vgs:
50 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:
3V @ 1mA
Gate Charge (Qg) @ Vgs:
-
Input Capacitance (Ciss) @ Vds:
70pF @ 25V
Power - Max:
2W
Mounting Type:
Surface Mount
Package / Case:
TO-261-4, TO-261AA
Supplier Device Package:
SOT-223
1N5822
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