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Discrete Semiconductors
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IGBT
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Fairchild Semiconductor (HGT1S10N120BNST)
PartNo:
HGT1S10N120BNST
Manufacturers:
Fairchild Semiconductor
Qty:
699
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Description:
IGBT Transistors N-Channel IGBT NPT Series 1200V
PDF:
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Product Information:
RoHS:
Details
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
2.7 V
Maximum Gate Emitter Voltage:
+/- 20 V
Continuous Collector Current at 25 C:
35 A
Gate-Emitter Leakage Current:
+/- 250 nA
Power Dissipation:
298 W
Maximum Operating Temperature:
+ 150 C
Package / Case:
TO-263AB-3
Packaging:
Reel
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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