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All Product >
Discrete Semiconductors
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IGBT
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IXYS (IXYX100N120C3)
PartNo:
IXYX100N120C3
Manufacturers:
IXYS
Qty:
385
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Description:
IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
PDF:
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Product Information:
RoHS:
Details
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1200 V
Collector-Emitter Saturation Voltage:
2.9 V
Maximum Gate Emitter Voltage:
30 V
Continuous Collector Current at 25 C:
188 A
Gate-Emitter Leakage Current:
100 nA
Power Dissipation:
1150 W
Maximum Operating Temperature:
+ 175 C
Package / Case:
TO-247-3
Packaging:
Tube
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
IXYX100N120C3 Related Product
IXYX100N120C3
IXYX100N120C3
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