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 All Product > Discrete Semiconductors > IGBT > IXYS  (IXYX100N120C3)
IXYS IXYX100N120C3
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IXYX100N120C3

Manufacturers: IXYS
Qty: 385
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Description: IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
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Product Information:

RoHS:Details
Configuration:Single
Collector- Emitter Voltage VCEO Max:1200 V
Collector-Emitter Saturation Voltage:2.9 V
Maximum Gate Emitter Voltage:30 V
Continuous Collector Current at 25 C:188 A
Gate-Emitter Leakage Current:100 nA
Power Dissipation:1150 W
Maximum Operating Temperature:+ 175 C
Package / Case:TO-247-3
Packaging:Tube
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