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IXYS IXXH30N65B4
PartNo:

IXXH30N65B4
Manufacturers: IXYS
Qty: 245
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Description: IGBT Transistors 650V/65A Trench IGBT GenX4 XPT
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Product Information:
RoHS:Details
Configuration:Single
Collector- Emitter Voltage VCEO Max:650 V
Collector-Emitter Saturation Voltage:1.66 V
Maximum Gate Emitter Voltage:20 V
Continuous Collector Current at 25 C:65 A
Gate-Emitter Leakage Current:100 nA
Power Dissipation:230 W
Maximum Operating Temperature:+ 175 C
Package / Case:TO-247AD-3
Packaging:Tube
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