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Discrete Semiconductors
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IGBT
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NXP Semiconductors (PMV160UP,215)
PartNo:
PMV160UP,215
Manufacturers:
NXP Semiconductors
Qty:
8694
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Description:
MOSFET P-CH -20 V -1.2 A
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
- 20 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:
- 1.2 A
Rds On - Drain-Source Resistance:
210 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
4 nC
Maximum Operating Temperature:
Pd - Power Dissipation:
335 mW
Mounting Style:
SMD/SMT
Package / Case:
SOT-23-3
Packaging:
Reel
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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PMV1-P10-CY
PMV1-5FB-CY
PMV1-4RB-CY
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PMV160UP,215
PMV160UP,215
PMV160UP,215
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