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Discrete Semiconductors
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IGBT
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Toshiba (TPN13008NH,L1Q)
PartNo:
TPN13008NH,L1Q
Manufacturers:
Toshiba
Qty:
5000
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Description:
MOSFET Power moSFET N-ch 60V
PDF:
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
80 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
40 A
Rds On - Drain-Source Resistance:
13.3 mOhms
Configuration:
Vgs th - Gate-Source Threshold Voltage:
4 V
Qg - Gate Charge:
18 nC
Maximum Operating Temperature:
Pd - Power Dissipation:
42 W
Mounting Style:
SMD/SMT
Package / Case:
TSON Advance-8
Packaging:
Reel
SLA5222
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RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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