Home
Tel: 86-755-83295289 Email:
Product Detail
 All Product > Discrete Semiconductors > IGBT > Diodes Incorporated  (ZXMHC3F381N8TC)
Diodes Incorporated ZXMHC3F381N8TC
PartNo:

ZXMHC3F381N8TC
Manufacturers: Diodes Incorporated
Qty: 4988
Request Qty:   
Description: MOSFET MOSFET H-BRIDGE SOP-8L
PDF:
Quick Quotation
Company Name:* Contact Name:*  
Email:* Tel:*
Request Qty:* Verification Code:*

Product Information:
RoHS:Details
Transistor Polarity:N and P-Channel
Vds - Drain-Source Breakdown Voltage:30 V
Vgs - Gate-Source Breakdown Voltage:
Id - Continuous Drain Current:4.98 A, 4.13 A
Rds On - Drain-Source Resistance:60 mOhms, 80 mOhms
Configuration:Half-Bridge
Vgs th - Gate-Source Threshold Voltage:1 V
Qg - Gate Charge:9 nC, 12.7 nC
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:1.35 W
Mounting Style:SMD/SMT
Package / Case:SO-8
Packaging:Reel
SLA5222
SLA5222
IGBT 600V 30A PFC
RJH60F5DPK-00#T0
RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IKW08T120
IGBT 1200V 16A 70W TO247-3
ZXMHC3F381N8TC Related Product
  • Electronic Components Distributor
    Since 2000
  • ©2001 - 2015  www.cxda.com all rights reservied.
  • Electronic Components Supplier  | 
  • China Electronic Components Manufacturer  | 
  • Electronic Components Distributor