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Discrete Semiconductors
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IGBT
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Toshiba (TPH5R906NH,L1Q)
PartNo:
TPH5R906NH,L1Q
Manufacturers:
Toshiba
Qty:
4592
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Description:
MOSFET N-Ch 60V FET 28A 57W 2340pF 38nC
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Product Information:
RoHS:
Details
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Vgs - Gate-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
71 A
Rds On - Drain-Source Resistance:
4.8 mOhms
Configuration:
Single
Vgs th - Gate-Source Threshold Voltage:
2 V to 4 V
Qg - Gate Charge:
38 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
57 W
Mounting Style:
SMD/SMT
Package / Case:
SOP-8
Packaging:
Reel
SLA5222
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RJH60F5DPK-00#T0
IGBT 600V 80A 260.4W TO-3P
IXGH17N100AU1
IGBT 1000V 34A 150W TO247AD
APT50GN60BDQ2G
IGBT 600V 107A 366W TO247
IKW08T120
IGBT 1200V 16A 70W TO247-3
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