AT28C010E12DM
Features
•Fast Read Access Time - 120 ns
•Automatic Page Write Operation
– Internal Address and Data Latches for 128-Bytes
– Internal Control Timer
•Fast Write Cycle Time
– Page Write Cycle Time - 10 ms Maximum
– 1 to 128-Byte Page Write Operation
•Low Power Dissipation
– 80 mA Active Current
– 300μA CMOS Standby Current•Hardware and Software Data Protection
•DATA Polling for End of Write Detection
•High Reliability CMOS Technology
– Endurance: 104or 105Cycles
– Data Retention: 10 Years
•Single 5V 10% Supply
•CMOS and TTL Compatible Inputs and Outputs
•JEDEC Approved Byte-Wide Pinout
Description
The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Mem-ory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured withAtmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns withpower dissipation of just 440 mW. When the device is deselected, the CMOS standby current isless than 300mA.
The AT28C010 is accessed like a Static RAM for the read or write cycle without the need forexternal components. The device contains a 128-byte page register to allow writing of up to 128-bytes simultaneously. During a write cycle, the address and 1 to 128-bytes of data are internallylatched, freeing the address and data bus for other operations. Following the initiation of a writecycle, the device will automatically write the latched data using an internal control timer. The endof a write cycle can be detected byDATA POLLING of I/O7. Once the end of a write cycle hasbeen detected a new access for a read or write can begin.
Atmel's 28C010 has additional features to ensure high quality and manufacturability. The deviceutilizes internal error correction for extended endurance and improved data retention character-istics. An optional software data protection mechanism is available to guard against inadvertentwrites. The device also includes an extra 128-bytes of EEPROM for device identification ortracking. |