
Taiyo Yuden
NRH2412T2R2MNGH
Inductor Power Shielded Wirewound 2.2uH 20% 100KHz Ferrite 1A 0.168Ohm DCR T/R
95,788 products

Taiyo Yuden
Inductor Power Shielded Wirewound 2.2uH 20% 100KHz Ferrite 1A 0.168Ohm DCR T/R

Taiyo Yuden
Inductor Power Shielded Wirewound 4.7uH 30% 100KHz Ferrite 4.1A 0.0234Ohm DCR 3131 T/R

Taiyo Yuden
Inductor Power Shielded Wirewound 4.7uH 30% 100KHz Ferrite 4.1A 0.0234Ohm DCR 3131 Automotive T/R


Taiyo Yuden
Inductor Power Shielded Wirewound 6.8uH 30% 100KHz Ferrite 3.7A 0.0325Ohm DCR 3131 T/R

Taiyo Yuden
Inductor Power Shielded Wirewound 3.3uH 20% 100KHz Ferrite 3A 0.039Ohm DCR T/R

Samsung Electro-Mechanics
Ind Power Chip Shielded Multi-Layer 2.2uH 20% 1MHz Ferrite 1.1A 1008 Embossed T/R


Samsung Electro-Mechanics
CIG Series 1008 1 uH ±20% Tolerance 1.8 A 65 mO Shielded Power Inductor
Samsung Electro-Mechanics
Power Inductor : LxW size(mm) 2016 Thickness1 Inductance (uH) 20%: 2.2
Samsung Electro-Mechanics
Power Inductor : LxW size(mm) 2012 Thickness0.8 Inductance (uH) 20%: 0.47

Samsung Electro-Mechanics
Inductor Power Thin Film 1uH 20% 1MHz Metal 3.1A 0.055Ohm DCR 0805

Samsung Electro-Mechanics
Inductor Multi-Layer 1.2nH 0.3nH 100MHz 8Q-Factor Ceramic 300mA 120mOhm DCR 0402

Samsung Electro-Mechanics
Ind High Frequency Chip Multi-Layer 33nH 5% 100MHz 8Q-Factor Ceramic 250mA 0402 Paper T/R

Samsung Electro-Mechanics
Ind High Frequency Chip Multi-Layer 1nH 0.3nH 100MHz 4Q-Factor Ceramic 300mA 0201 Paper T/R
Samsung Electro-Mechanics
Ind Chip Shielded Multi-Layer 10uH 10% 2MHz 50Q-Factor Ferrite 25mA 1206 Embossed T/R



Samsung Electro-Mechanics
Ind Power Chip Shielded Multi-Layer 1uH 20% 1MHz Ferrite 1.6A 1008 Embossed T/R

Samsung Electro-Mechanics
Ind Chip Shielded Multi-Layer 2.2uH 10% 10MHz 35Q-Factor Ferrite 15mA 0603 Paper T/R

Samsung Electro-Mechanics
Ind Power Chip Shielded Multi-Layer 4.7uH 20% 1MHz Ferrite 1.1A 1008 Embossed T/R

Samsung Electro-Mechanics
Ind High Frequency Chip Multi-Layer 220nH 5% 100MHz 8Q-Factor Ceramic 200mA 0603 Paper T/R

Samsung Electro-Mechanics
Power Inductor LxW size(mm) 2016 Thickness1 Inductance (uH) 20% 0.47 Tape a

Samsung Electro-Mechanics
Ind Chip Shielded Multi-Layer 68nH 20% 50MHz 15Q-Factor Ferrite 300mA 0805 Embossed T/R

Samsung Electro-Mechanics
Ind Power Chip Shielded Multi-Layer 1.2uH 20% 1MHz Ferrite 1.5A 1008 Embossed T/R

Samsung Electro-Mechanics
Ind High Frequency Chip Multi-Layer 15nH 5% 100MHz 12Q-Factor Ceramic 500mA 0603 Paper T/R

Samsung Electro-Mechanics
Ind Chip Shielded Multi-Layer 270nH 10% 25MHz 20Q-Factor Ferrite 250mA 0805 Embossed T/R

Samsung Electro-Mechanics
Ind Power Chip Shielded Multi-Layer 10uH 20% 1MHz Ferrite 600mA 1008 Embossed T/R



Samsung Electro-Mechanics
Ind Chip Shielded Multi-Layer 1.2uH 10% 10MHz 35Q-Factor Ferrite 25mA 0603 Paper T/R

Samsung Electro-Mechanics
Ind High Frequency Chip Multi-Layer 47nH 5% 100MHz 8Q-Factor Ceramic 200mA 0402 Paper T/R

Samsung Electro-Mechanics
Ind High Frequency Chip Multi-Layer 3.3nH 0.3nH 100MHz 8Q-Factor Ceramic 300mA 0402 Paper T/R

Samsung Electro-Mechanics
Ind Power Chip Shielded Multi-Layer 2.2uH 20% 1MHz Ferrite 750mA 0603 Paper T/R



Samsung Electro-Mechanics
Ind Power Chip Shielded Multi-Layer 1uH 20% 1MHz Ferrite 2A 1008 Embossed T/R

Samsung Electro-Mechanics
Ind High Frequency Chip Multi-Layer 22nH 5% 100MHz 8Q-Factor Ceramic 250mA 0402 Paper T/R

Samsung Electro-Mechanics
Ind Power Shielded Multilayer 1uH 20% 1MHz Ceramic 2.3A Emboss T/R

Samsung Electro-Mechanics
33 nH Unshielded Thin Film Inductor 5 A 22mOhm Max 18 (252 Metric) -


Samsung Electro-Mechanics
General, Ferrite Multilayer, General Type, Multilayer, 0805, RoHS
Samsung Electro-Mechanics
Ind Chip Shielded Multi-Layer 3.3uH 10% 10MHz 45Q-Factor Ferrite 30mA 0805 Embossed T/R
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