EPC2012CENGR
TRANS GAN 200V 5A BUMPED DIE
Key specifications
- Part Number
- EPC2012CENGR
- Manufacturer
- EPC
- Category
- Transistors - FETs, MOSFETs - Single
- RoHS
- REACH
- Datasheet
- Pricing
- $1.1480
Product Attributes
- Series
- eGaN
- Package
- Tape & Reel (TR)
- Technology
- GaNFET (Gallium Nitride)
- FET Feature
- N-Channel
- RoHS Status
- Tape & Reel (TR)
- Polarization
- Die
- Mounting Type
- Surface Mount
- Voltage - Test
- 100pF @ 100V
- Vgs(th) (Max) @ Id
- 100 mOhm @ 3A, 5V
- Voltage - Breakdown
- Die Outline (4-Solder Bar)
- Expanded Description
- N-Channel 200V 5A (Ta) Surface Mount Die Outline (4-Solder Bar)
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 5A (Ta)
- Manufacturer Part Number
- EPC2012CENGR
- Gate Charge (Qg) (Max) @ Vgs
- 2.5V @ 1mA
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds
- 1nC @ 5V
- Current - Continuous Drain (Id) @ 25°C
- 200V
Product support
- What is the MOQ for EPC2012CENGR?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.