EPC2110
Mosfet Array 2 N-Channel (Dual) Common Drain 120V 3.4A Die
Key specifications
- Part Number
- EPC2110
- Manufacturer
- EPC
- Category
- Transistors - FETs, MOSFETs - Arrays
- Lead Time
- 14 Weeks
- RoHS
- REACH
- Datasheet
- Pricing
- $1.2540 – $2.6800
Product Attributes
- Series
- eGaN
- Package
- Cut Tape (CT)
- FET Type
- 2 N-Channel (Dual) Common Drain
- Packaging
- Cut Tape (CT)
- FET Feature
- GaNFET (Gallium Nitride)
- Package / Case
- Die
- Vgs(th) (Max) @ Id
- 2.5V @ 700A
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 60 mOhm @ 4A, 5V
- Supplier Device Package
- Die
- Gate Charge (Qg) (Max) @ Vgs
- 0.8nC @ 5V
- Drain to Source Voltage (Vdss)
- 120V
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds
- 80pF @ 60V
- Current - Continuous Drain (Id) @ 25°C
- 3.4A
Product support
- What is the MOQ for EPC2110?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.