MB85R256GPF-G-BNDE1
FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 150ns
Key specifications
- Part Number
- MB85R256GPF-G-BNDE1
- Manufacturer
- Fujitsu Electronics America, Inc.
- Category
- Memory
- RoHS
- REACH
- Pricing
- Contact for pricing
Product Attributes
- Technology
- FRAM (Ferroelectric RAM)
- Access Time
- 150ns
- Memory Size
- 256Kb (32K x 8)
- Memory Type
- Non-Volatile
- Memory Format
- FRAM
- Memory Interface
- Parallel
- Voltage - Supply
- 2.7 V ~ 3.6 V
- Operating Temperature
- -40°C ~ 85°C (TA)
- Write Cycle Time - Word, Page
- 150ns
- Moisture Sensitivity Level (MSL)
- 3 (168 Hours)
Product support
- What is the MOQ for MB85R256GPF-G-BNDE1?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.