GP1M006A065FH
MOSFET N-CH 650V 5.5A TO220F
Key specifications
- Part Number
- GP1M006A065FH
- Manufacturer
- Global Power
- Category
- Transistors - FETs, MOSFETs - Single
- RoHS
- REACH
- Datasheet
- Pricing
- Contact for pricing
Product Attributes
- Package
- Tube
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Power Dissipation (Max)
- 39W (Tc)
- Gate Charge (Qg) (Max) @ Vgs
- 17nC @ 10V
- Drain to Source Voltage (Vdss)
- 650V
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 5.5A (Tc)
Product support
- What is the MOQ for GP1M006A065FH?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.