GP1M008A080H
MOSFET N-CH 800V 8A TO220
Key specifications
- Part Number
- GP1M008A080H
- Manufacturer
- Global Power
- Category
- Transistors - FETs, MOSFETs - Single
- RoHS
- REACH
- Datasheet
- Pricing
- Contact for pricing
Product Attributes
- Package
- Tube
- FET Type
- N-Channel
- Packaging
- Tube
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 4V @ 250A
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.4 Ohm @ 4A, 10V
- Power Dissipation (Max)
- 250W (Tc)
- Supplier Device Package
- TO-220
- Gate Charge (Qg) (Max) @ Vgs
- 46nC @ 10V
- Drain to Source Voltage (Vdss)
- 800V
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds
- 1921pF @ 25V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 8A (Tc)
Product support
- What is the MOQ for GP1M008A080H?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.