GP1M010A060H
N-Channel 600V 10A (Tc) 198W (Tc) Through Hole TO-220
Key specifications
- Part Number
- GP1M010A060H
- Manufacturer
- Global Power
- Category
- Transistors - FETs, MOSFETs - Single
- RoHS
- REACH
- Datasheet
- Pricing
- Contact for pricing
Product Attributes
- Package
- Tube
- Packaging
- Tube
- Vgs (Max)
- ±30V
- Technology
- MOSFET (Metal Oxide)
- Package / Case
- TO-220-3
- Vgs(th) (Max) @ Id
- 4V @ 250A
- Rds On (Max) @ Id, Vgs
- 750 mOhm @ 5A, 10V
- Power Dissipation (Max)
- 198W (Tc)
- Supplier Device Package
- TO-220
- Gate Charge (Qg) (Max) @ Vgs
- 36nC @ 10V
- Drain to Source Voltage (Vdss)
- 600V
- Input Capacitance (Ciss) (Max) @ Vds
- 1891pF @ 25V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 10A (Tc)
Product support
- What is the MOQ for GP1M010A060H?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.