IPB60R060P7ATMA1
N-Channel 650V 48A (Tc) 164W (Tc) Surface Mount DPAK (TO-263AB)

Key specifications
- Part Number
- IPB60R060P7ATMA1
- Manufacturer
- Infineon
- Category
- Transistors - FETs, MOSFETs - Single
- Datasheet
- Pricing
- $4.7420 – $8.0000
Product Attributes
- Series
- CoolMOS P7
- Package
- Cut Tape (CT)
- FET Type
- N-Channel
- Packaging
- Cut Tape (CT)
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, DPak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 4V @ 800A
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 60 mOhm @ 15.9A, 10V
- Power Dissipation (Max)
- 164W (Tc)
- Supplier Device Package
- DPAK (TO-263AB)
- Gate Charge (Qg) (Max) @ Vgs
- 67nC @ 10V
- Drain to Source Voltage (Vdss)
- 650V
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds
- 2895pF @ 400V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 48A (Tc)
Product support
- What is the MOQ for IPB60R060P7ATMA1?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.
