IRFSL31N20D
N-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole TO-262
Key specifications
- Part Number
- IRFSL31N20D
- Manufacturer
- Infineon
- Category
- Transistors - FETs, MOSFETs - Single
- RoHS
- REACH
- Datasheet
- Pricing
- $4.5260
Product Attributes
- Series
- HEXFET
- Package
- Tube
- FET Type
- N-Channel
- Packaging
- Tube
- Vgs (Max)
- ±30V
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, IPak, TO-262AA
- Vgs(th) (Max) @ Id
- 5.5V @ 250A
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 82 mOhm @ 18A, 10V
- Power Dissipation (Max)
- 3.1W (Ta), 200W (Tc)
- Supplier Device Package
- TO-262
- Gate Charge (Qg) (Max) @ Vgs
- 110nC @ 10V
- Drain to Source Voltage (Vdss)
- 200V
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds
- 2370pF @ 25V
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 31A (Tc)
Product support
- What is the MOQ for IRFSL31N20D?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.