JANTXV2N6849
P-Channel 100V 6.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-205AF (TO-39)
Key specifications
- Part Number
- JANTXV2N6849
- Manufacturer
- Infineon
- Category
- Transistors - FETs, MOSFETs - Single
- RoHS
- REACH
- Datasheet
- Pricing
- $29.1400 – $36.2300
Product Attributes
- Series
- Military, MIL-PRF-19500/564
- Package
- Bulk
- FET Type
- P-Channel
- Packaging
- Bulk
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Through Hole
- Package / Case
- TO-205AF Metal Can
- Vgs(th) (Max) @ Id
- 4V @ 250A
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 320 mOhm @ 6.5A, 10V
- Power Dissipation (Max)
- 800mW (Ta), 25W (Tc)
- Supplier Device Package
- TO-205AF (TO-39)
- Gate Charge (Qg) (Max) @ Vgs
- 34.8nC @ 10V
- Drain to Source Voltage (Vdss)
- 100V
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 6.5A (Tc)
Product support
- What is the MOQ for JANTXV2N6849?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.