2N6668
Bipolar (BJT) Transistor PNP - Darlington 80V 10A 65W Through Hole TO-220AB
Key specifications
- Part Number
- 2N6668
- Manufacturer
- NTE Electronics
- Category
- Transistors - Bipolar (BJT) - Single
- RoHS
- REACH
- Pricing
- $0.8460 – $1.0140
Product Attributes
- Package
- Tube
- Packaging
- Tube
- Power - Max
- 65W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Transistor Type
- PNP - Darlington
- Base Part Number
- 2N6668
- Operating Temperature
- 150°C (TJ)
- Supplier Device Package
- TO-220AB
- Vce Saturation (Max) @ Ib, Ic
- 3V @ 100mA, 10A
- Current - Collector (Ic) (Max)
- 10A
- Current - Collector Cutoff (Max)
- 1mA
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 1000 @ 5A, 3V
- Voltage - Collector Emitter Breakdown (Max)
- 80V
Product support
- What is the MOQ for 2N6668?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.