2SD1060S-1E
Bipolar (BJT) Transistor NPN 50V 5A 30MHz 1.75W Through Hole TO-220-3
Key specifications
- Part Number
- 2SD1060S-1E
- Manufacturer
- onsemi
- Category
- Transistors - Bipolar (BJT) - Single
- Lead Time
- 42 Weeks
- RoHS
- REACH
- Datasheet
- Pricing
- $0.5140 – $0.5710
Product Attributes
- Package
- Tube
- Packaging
- Tube
- Power - Max
- 1.75W
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Frequency - Transition
- 30MHz
- Supplier Device Package
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 300mA, 3A
- Current - Collector (Ic) (Max)
- 5A
- Current - Collector Cutoff (Max)
- 100A (ICBO)
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 140 @ 1A, 2V
- Voltage - Collector Emitter Breakdown (Max)
- 50V
Product support
- What is the MOQ for 2SD1060S-1E?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.