2N6796
N-Channel 100V 8A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-39

Key specifications
- Part Number
- 2N6796
- Manufacturer
- Semelab
- Category
- Transistors - FETs, MOSFETs - Single
- Pricing
- $15.1320 – $18.8130
Product Attributes
- Package
- Bulk
- FET Type
- N-Channel
- Packaging
- Bulk
- Vgs (Max)
- ±20V
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Through Hole
- Package / Case
- TO-205AF Metal Can
- Vgs(th) (Max) @ Id
- 4V @ 250mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 180 mOhm @ 5A, 10V
- Power Dissipation (Max)
- 800mW (Ta), 25W (Tc)
- Supplier Device Package
- TO-39
- Gate Charge (Qg) (Max) @ Vgs
- 6.34nC @ 10V
- Drain to Source Voltage (Vdss)
- 100V
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 8A (Tc)
Product support
- What is the MOQ for 2N6796?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.
