BSP89E6327
Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
Key specifications
- Part Number
- BSP89E6327
- Manufacturer
- Siemens
- Category
- Transistors - FETs, MOSFETs - Single
- RoHS
- REACH
- Pricing
- Contact for pricing
Product Attributes
- Series
- SIPMOS
- Package
- Tape & Reel (TR)
- Technology
- MOSFET (Metal Oxide)
- Vgs(th) (Max) @ Id
- 1.8V @ 108A
- Rds On (Max) @ Id, Vgs
- 6 Ohm @ 350mA, 10V
- Power Dissipation (Max)
- 1.8W (Ta)
- Supplier Device Package
- PG-SOT223-4
- Drain to Source Voltage (Vdss)
- 240V
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
Product support
- What is the MOQ for BSP89E6327?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.