2SA1425-Y,T2F(J
Bipolar (BJT) Transistor PNP 120V 800mA 120MHz 1W Through Hole MSTM
Key specifications
- Part Number
- 2SA1425-Y,T2F(J
- Manufacturer
- Toshiba
- Category
- Transistors - Bipolar (BJT) - Single
- RoHS
- REACH
- Datasheet
- Pricing
- Contact for pricing
Product Attributes
- Package
- Bulk
- Packaging
- Bulk
- Power - Max
- 1W
- Mounting Type
- Through Hole
- Transistor Type
- PNP
- Operating Temperature
- 150°C (TJ)
- Frequency - Transition
- 120MHz
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 100mA, 5V
Product support
- What is the MOQ for 2SA1425-Y,T2F(J?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.