2SA1680(F,M)
Bipolar (BJT) Transistor PNP 50V 2A 100MHz 900mW Through Hole TO-92MOD
Key specifications
- Part Number
- 2SA1680(F,M)
- Manufacturer
- Toshiba
- Category
- Transistors - Bipolar (BJT) - Single
- RoHS
- REACH
- Datasheet
- Pricing
- Contact for pricing
Product Attributes
- Package
- Bulk
- Packaging
- Bulk
- Power - Max
- 900mW
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Transistor Type
- PNP
- Frequency - Transition
- 100MHz
- Supplier Device Package
- TO-92MOD
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 50mA, 1A
- Current - Collector (Ic) (Max)
- 2A
- Current - Collector Cutoff (Max)
- 1A (ICBO)
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max)
- 50V
Product support
- What is the MOQ for 2SA1680(F,M)?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.