2SC2235-O(T6FJT,FM
Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 900mW Through Hole TO-92MOD
Key specifications
- Part Number
- 2SC2235-O(T6FJT,FM
- Manufacturer
- Toshiba
- Category
- Transistors - Bipolar (BJT) - Single
- RoHS
- REACH
- Datasheet
- Pricing
- Contact for pricing
Product Attributes
- Package
- Bulk
- Packaging
- Bulk
- Power - Max
- 900mW
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Transistor Type
- NPN
- Operating Temperature
- 150°C (TJ)
- Frequency - Transition
- 120MHz
- Supplier Device Package
- TO-92MOD
- Vce Saturation (Max) @ Ib, Ic
- 1V @ 50mA, 500mA
- Current - Collector (Ic) (Max)
- 800mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 80 @ 100mA, 5V
- Voltage - Collector Emitter Breakdown (Max)
- 120V
Product support
- What is the MOQ for 2SC2235-O(T6FJT,FM?
- Minimum order quantity is 1 units.
- How do I get pricing?
- Submit an RFQ or contact our sales team for volume pricing and lead times.
- Is this part RoHS compliant?
- Yes, this part is RoHS compliant.